PART |
Description |
Maker |
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
LX703-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
L88016-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G22L-200 BLF7G22LS-200 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP05H6110XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|